双层
凝聚态物理
材料科学
单层
Berry连接和曲率
化学气相沉积
铁电性
拓扑(电路)
纳米技术
几何相位
光电子学
物理
膜
电介质
化学
生物化学
组合数学
数学
作者
Teng Ma,Hao Chen,Kunihiro Yananose,Xin Zhou,Lin Wang,Runlai Li,Ziyu Zhu,Zhenyue Wu,Qing‐Hua Xu,Jaejun Yu,Cheng‐Wei Qiu,Alessandro Stroppa,Kian Ping Loh
标识
DOI:10.1038/s41467-022-33201-3
摘要
Abstract The reduced symmetry in strong spin-orbit coupling materials such as transition metal ditellurides (TMDTs) gives rise to non-trivial topology, unique spin texture, and large charge-to-spin conversion efficiencies. Bilayer TMDTs are non-centrosymmetric and have unique topological properties compared to monolayer or trilayer, but a controllable way to prepare bilayer MoTe 2 crystal has not been achieved to date. Herein, we achieve the layer-by-layer growth of large-area bilayer and trilayer 1T′ MoTe 2 single crystals and centimetre-scale films by a two-stage chemical vapor deposition process. The as-grown bilayer MoTe 2 shows out-of-plane ferroelectric polarization, whereas the monolayer and trilayer crystals are non-polar. In addition, we observed large in-plane nonlinear Hall (NLH) effect for the bilayer and trilayer T d phase MoTe 2 under time reversal-symmetric conditions, while these vanish for thicker layers. For a fixed input current, bilayer T d MoTe 2 produces the largest second harmonic output voltage among the thicker crystals tested. Our work therefore highlights the importance of thickness-dependent Berry curvature effects in TMDTs that are underscored by the ability to grow thickness-precise layers.
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