双层
物理
结晶学
能量(信号处理)
双层石墨烯
凝聚态物理
材料科学
化学
量子力学
石墨烯
膜
生物化学
作者
S. Venkateswarlu,A. Honecker,Guy Trambly de Laissardière
出处
期刊:Physical review
日期:2020-08-05
卷期号:102 (8)
被引量:27
标识
DOI:10.1103/physrevb.102.081103
摘要
Moir\'e patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates reliable and systematic studies of such states in twisted bilayer ${\mathrm{MoS}}_{2}$ for the whole range of rotation angles $\ensuremath{\theta}$. We show that isolated bands appear at low energy for $\ensuremath{\theta}\ensuremath{\lesssim}{5}^{\ensuremath{\circ}}--{6}^{\ensuremath{\circ}}$. Moreover, these bands become ``flatbands,'' characterized by a vanishing average velocity, for the smallest angles $\ensuremath{\theta}\ensuremath{\lesssim}{2}^{\ensuremath{\circ}}$.
科研通智能强力驱动
Strongly Powered by AbleSci AI