材料科学
氮化铌
光电子学
铌
纳米线
氮化物
吸收(声学)
分布式布拉格反射镜
光学
光子学
图层(电子)
反射(计算机编程)
纳米技术
复合材料
冶金
物理
程序设计语言
计算机科学
波长
作者
Yang Wu,Qi Chen,Ran Xu,Rui Ge,Biao Zhang,Xu Tao,Xuecou Tu,Xiaoqing Jia,Labao Zhang,Lin Kang,Peiheng Wu
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2018-01-01
卷期号:67 (24): 248501-248501
被引量:3
标识
DOI:10.7498/aps.67.20181646
摘要
Niobium nitride (NbN) nanowires are commonly used as photosensitive materials for superconducting nanowire single-photon detectors (SNSPDs). Their optical properties are the key factors influencing the performance of SNSPD. According to the experimental data and simulation results, in this paper we systematically study the optical properties of various niobium nitride nanowire detector device structures, and characterize the reflection spectra and transmission spectra of the following four device structures:1) Backside optical devices with SiO<sub>2</sub> as the antireflection layer, 2) backside optical devices with SiN as the antireflection layer, 3) front-facing optical devices with Au+SiN as a mirror, and 4) front-facing optical devices with distributed Bragg reflector (DBR) as a mirror. The NbN films with different thickness are grown on the basis of the four device structures, and the absorption efficiencies of the NbN films with different thickness are observed. The relationships between the optimal NbN thickness and the optical absorption rate for different device structures are found as follows:The maximum absorption rate of NbN on the SiO<sub>2</sub> antireflection layer is 91.7% at 1606 nm, while the absorption rates of the remaining structures at the optimal thickness of NbN can reach 99% or more. The absorption rate of the SiN device, the Au+SiN device and the DBR device are 99.3%, 99.8% and 99.9%, respectively. The measured results and simulation structure of DBR device are analyzed. These results are of significance for guiding the design and development of high efficiency SNSPD.
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