Atomic layer deposition of dielectric Y2O3 thin films from a homoleptic yttrium formamidinate precursor and water

In this work, the application of tris(N,N′-diisopropyl-formamidinato)yttrium(iii) [Y(DPfAMD)₃] as a precursor in a water-assisted thermal atomic layer deposition (ALD) process for the fabrication of device quality Y₂O₃ thin films is demonstrated.