材料科学
外延
氮化硼
透射电子显微镜
无定形固体
X射线光电子能谱
硅烷
结晶学
扫描电子显微镜
化学气相沉积
分析化学(期刊)
图层(电子)
化学工程
纳米技术
复合材料
化学
色谱法
工程类
作者
Laurent Souqui,Justinas Pališaitis,Naureen Ghafoor,Henrik Pedersen,Hans Högberg
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2020-12-21
卷期号:39 (1)
被引量:12
摘要
Epitaxial rhombohedral boron nitride (r-BN) films were deposited on ZrB2(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH4). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of r-BN(0001)∥ZrB2(0001)out-of-plane and r-BN[112¯0]∥ZrB2[112¯0] in-plane. Cross-sectional transmission electron microscopy (TEM) micrographs showed that epitaxial growth of r-BN films prevails to ∼10 nm. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB2 surface. Quantitative analysis from x-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 and 1.20 and an O content of 3–4 at. %. Plan-view scanning electron microscopy images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals.
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