微处理器
瞬态(计算机编程)
计算机科学
瞬态分析
脉搏(音乐)
群(周期表)
电气工程
嵌入式系统
工程类
操作系统
电信
瞬态响应
物理
量子力学
探测器
作者
Lei Liu,Wenxiao Fang,Xiangjun Lu,Shuwang Dai
标识
DOI:10.1109/icicm54364.2021.9660269
摘要
Electrical Fast Transient Pulse (EFT) is a kind of transient pulse interference caused by lightning, grounding fault or the switching of inductive load in circuit. Researchers from Cisco, Intel and other companies have proposed a model to simulate the EFT pulse coupling into the IC's power pin and input/output (I/O) pin through the EFT transient disturbance rejection direction, which is used to study the EFT disturbance rejection capability of Microcontroller unit(MCU). However, there is no failure analysis for the failed pins. This article uses a device to conduct EFT interference experiment on MCU, and analyze the failure of the faulty pin. Experiment result shows that MCU failure occurs when the coupling voltage is about 10V, and the damage is about 30V.According to the analysis of the experimental results, during the EFT test process, the power supply pins start to fail when the coupling voltage is very small and the voltage when burning is also small, which has a great impact on the EFT performance of the entire MCU. Therefore, it is necessary to consider the protection of I/O pins and strictly design the EFT protection structure of MCU.
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