材料科学
光电子学
辐照
聚苯乙烯
晶体管
电介质
栅极电介质
图层(电子)
聚合物
电子线路
纳米技术
电气工程
电压
复合材料
核物理学
工程类
物理
作者
Wenwu Li,Fanming Huang,Chenlin Gao,Yabin Sun,Xiaojun Guo,Yi-Ting Chen,Junhao Chu,Ying‐Chih Lai
出处
期刊:Nano Energy
[Elsevier]
日期:2022-09-01
卷期号:100: 107452-107452
被引量:1
标识
DOI:10.1016/j.nanoen.2022.107452
摘要
There is high demand for radiation-tolerant devices for use in electronic applications in extreme irradiation environments, but conventional silicon transistors cannot satisfy the device requirements. In this work, we systematically investigated the total ionizing dose (TID) responses of polymer field-effect transistors (PFETs). By selecting suitable polymer gate dielectric materials (especially PS), it is found that these PFETs show significantly improved tolerances to the TID. Specifically, a PFET fabricated using polystyrene as its gate dielectric layer can maintain more than 95% of its electrical performance even after exposure to a TID of 7.5 Mrad (SiO2). The irradiated device has a long shelf lifetime that exceeds 1000 days. Simple inverter circuits were also fabricated and also demonstrated tolerance to a high TID of 7.5 Mrad. This work provides a possible solution for the development of PFETs for applications in extreme irradiation environments.
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