MoS2 Nanoribbon Transistor for Logic Electronics

Tailoring MoS ₂ into nanoribbon (NR) provides an efficient regulation of the electrical property. Herein, high-performance MoS ₂ transistors are fabricated by optimizing the channel height, width, and length. The electrical performance of the device is improved due to enhanced gate modulation capability from the quasi-3D channel geometry. The devices obtain a high ON-state current of $496 ~\mu \text{A}\,\cdot \, \mu \text{m}$ ⁻¹ while offering appropriate field-effect mobility of 52.6 cm ² V ⁻¹ s ⁻¹ as the height and width of MoS ₂ NR are fixed to 20 ± 3 nm and 130 ± 10 nm, respectively. The high performance and desirable current saturation are promising to construct robust logic gates. The NOT and NAND gates are assembled based on an individual MoS ₂ NR. The inverters demonstrate a voltage gain of −17.8 and a total noise margin of nearly 75%. This work provides an alternative strategy to fully take the advantage of 2-D materials in logic electronics circuits.