铁电性
多铁性
材料科学
导电体
涡流
凝聚态物理
导线
拓扑缺陷
极化(电化学)
拓扑(电路)
纳米技术
光电子学
电介质
物理
电气工程
化学
工程类
物理化学
复合材料
热力学
作者
Nina Balke,Benjamin Winchester,Wei Ren,Ying Hao Chu,Anna N. Morozovska,Eugene A. Eliseev,Mark Huijben,Rama K. Vasudevan,Petro Maksymovych,Jason Britson,Stephen Jesse,Igor Kornev,R. Ramesh,L. Bellaïche,Lei Chen,Sergei V. Kalinin
出处
期刊:Nature Physics
[Springer Nature]
日期:2011-11-06
卷期号:8 (1): 81-88
被引量:330
摘要
Topological defects in ferroic materials are attracting much attention both as a playground of unique physical phenomena and for potential applications in reconfigurable electronic devices. Here, we explore electronic transport at artificially created ferroelectric vortices in BiFeO3 thin films. The creation of one-dimensional conductive channels activated at voltages as low as 1 V is demonstrated. We study the electronic as well as the static and dynamic polarization structure of several topological defects using a combination of first-principles and phase-field modelling. The modelling predicts that the core structure can undergo a reversible transformation into a metastable twist structure, extending charged domain walls segments through the film thickness. The vortex core is therefore a dynamic conductor controlled by the coupled response of polarization and electron–mobile-vacancy subsystems with external bias. This controlled creation of conductive one-dimensional channels suggests a pathway for the design and implementation of integrated oxide electronic devices based on domain patterning. The controlled creation of one-dimensional conductive channels at the cores of topological defects in the multiferroic material BiFeO3 demonstrates that such defects can drive metal–insulator phase transitions, and might provide a route towards high-density information storage.
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