材料科学
电阻率和电导率
硅
微尺度化学
电接点
硼
接触电阻
铝
合金
微观结构
兴奋剂
复合材料
冶金
纳米技术
图层(电子)
光电子学
化学
有机化学
数学
数学教育
工程类
电气工程
作者
Wei Wu,Katherine E. Roelofs,Shekhar Subramoney,Kathryn Lloyd,Lei Zhang
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2017-01-01
卷期号:7 (1)
被引量:12
摘要
The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.
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