材料科学
异质结
五氧化二铁
电阻率和电导率
化学工程
工作职能
离域电子
电场
钒
分析化学(期刊)
电导率
无定形固体
光电子学
纳米技术
化学
图层(电子)
结晶学
物理化学
冶金
物理
电气工程
有机化学
工程类
色谱法
量子力学
作者
Heechae Choi,Yong Jung Kwon,Ju Won Paik,Jae Bok Seol,Young Kyu Jeong
标识
DOI:10.1021/acsaelm.9b00397
摘要
Vanadium pentoxide (V2O5) is known to have natural n-type conductivity but transitions from n- to p-type conductivity when grown in a hydrated amorphous phase via atomic layer deposition. Compared with the intrinsic n-type character of V2O5, the hydrated amorphous V2O5 with artificial p-type conductivity has an increased work function difference, which can build stronger interface electric fields in ZnO/V2O5 heterojunction structures. This increased internal electric field strengthens the electron–hole separation across the heterojunction interface, which in turn improves the photocatalytic and photoelectrochemical performance of the structure. Using first-principles calculations, we found that when H2O molecules are incorporated into the amorphous V2O5 matrix, delocalized empty states are freshly formed above the valence band maximum in the hydrated amorphous V2O5, playing a crucial role in the transition of electrical conductivity within V2O5. This approach provides a simple and efficient way to discover new p-type materials and apply them to future p–n junction devices in terms of process simplicity and cost effectiveness.
科研通智能强力驱动
Strongly Powered by AbleSci AI