材料科学
响应度
光电子学
纤锌矿晶体结构
光电流
薄膜
光电探测器
电极
兴奋剂
旋涂
微晶
暗电流
紫外线
半导体
纳米技术
锌
化学
物理化学
冶金
作者
Chien‐Yie Tsay,Hsuan-Meng Tsai,Yun-Chi Chen
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2022-05-23
卷期号:12 (5): 746-746
被引量:5
标识
DOI:10.3390/cryst12050746
摘要
Transparent Ga and In co-doped ZnO (ZnO:Ga-In) semiconductor thin films were deposited on Corning glass substrates by the sol-gel spin-coating process. The ZnO:Ga-In thin films were used as the sensing layer of metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetectors (PDs). In this study, the optoelectronic characteristics of ZnO:Ga-In MSM PDs with symmetrical interdigital electrodes (Al–Al) and asymmetrical interdigital electrodes (Al–Au) were compared. The as-prepared ZnO:Ga-In thin films were polycrystalline, and they had a single-phase hexagonal wurtzite structure and high transparency (~88.4%) in the visible region. The MSM-PDs with asymmetric electrodes had significantly reduced dark current (9.6 × 10−5 A at 5 V) according to the current-voltage (I-V) characteristics and higher photoresponse properties than those of the MSM-PDs with symmetric electrodes, according to the current-time (I-t) characteristics. In addition, the Al–Au devices were self-powered without an applied bias voltage. The photocurrent was 6.0 × 10−5 A; the sensitivity and responsivity were 0.25 and 0.03 mA/W, respectively, under UV illumination.
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