A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band

In this work, we have reported a vertical CsPbBr 3 /ZnO heterojunction photodetector for photo-sensing lights from UV to visible band. The ZnO thin film is deposited on the c-sapphire substrate through a molecular beam epitaxy (MBE) technique, and then the CsPbBr 3 thin film is synthesized on the as-prepared ZnO film layer by using a solution processing method. The as-prepared CsPbBr 3 /ZnO heterostructure presents type-II energy band structure induced by the energy band offset effect, which can promote the separation and extraction efficiencies of the photo-generated electron-hole pairs. Compared with the CsPbBr 3 based metal-semiconductor-metal (MSM) structure photodetector, the heterojunction photodetector presents higher responsivity and detectivity of 630 µA/W and 7 × 10 9 Jones. While compared with the ZnO based MSM structure photodetector, the heterojunction device reveals much faster response speeds of 61 µs (rise time) and 1.4 ms (decay time). These findings demonstrate that the CsPbBr 3 /ZnO heterojunction photodetector is promising for constructing next generation perovskite based optoelectronic devices.