凝聚态物理
各向异性
磁各向异性
材料科学
磁场
切换时间
领域(数学)
图层(电子)
对称(几何)
扭矩
垂直的
物理
磁化
光学
光电子学
纳米技术
量子力学
热力学
数学
几何学
纯数学
作者
Ying Tao,Chao Sun,Wendi Li,Yang Liu,Fang Jin,Yi Hui,Huihui Li,Xiaoguang Wang,Kaifeng Dong
摘要
For real-world applications, it is desirable to realize field-free spin–orbit torque (SOT) switching in thin films with high perpendicular magnetic anisotropy (PMA). In this paper, we report that field-free SOT switching in a L10-FePt single layer with a large switching ratio of 26% is obtained by using a MgO ⟨100⟩⋀8°/⟨100⟩ miscut substrate. It is found that field-free switching depends on the direction of the imposed pulse current. Only when the electric current is along the y (010)-direction but not along the x (100)-direction does field-free switching happen, which can be attributed to the tilted PMA induced symmetry breaking in the x–z plane. Furthermore, under the field-free condition, our FePt single layer system exhibits stable multi-state magnetic switching behavior and nonlinear synaptic characteristics. This work paves the way to realize field-free SOT switching in the L10-FePt single layer, which will have significant impact on spin memory devices and synaptic electronics.
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