Tuning the Photocatalytic Activity of Ti-Based Metal–Organic Frameworks through Modulator Defect-Engineered Functionalization

光催化 材料科学 表面改性 金属有机骨架 纳米技术 金属 化学工程 冶金 有机化学 催化作用 吸附 工程类 化学
作者
Isabel Abánades Lázaro,Horațiu Szalad,Pablo Valiente,Josep Albero,Hermenegildo Garcı́a,Carlos Martí‐Gastaldo
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:14 (18): 21007-21017 被引量:27
标识
DOI:10.1021/acsami.2c02668
摘要

Defect engineering is a valuable tool to tune the photocatalytic activity of metal-organic frameworks (MOFs). Inducing defects through the attachment of functionalized modulators can introduce cooperative units that can tune the bandgap of the material and enhance their chemical, thermal, and photostabilities among other properties. However, the majority of defect engineering studies for photocatalytic applications are limited to Zr-based MOFs, and there is still a lack of interrelation between synthetic variables, the resultant MOF properties, and their effect on their photocatalytic performance. We report a comprehensive study on the defect engineering of the titanium heterometallic MOF MUV-10 by fluoro- and hydroxy-isophthalic acid (Iso) modulators, rationalizing the effect of the materials' properties on their photocatalytic activity for hydrogen production. The Iso-OH modified MOFs present a volcano-type profile with a 2.3-fold increase in comparison to the pristine materials, whereas the Iso-F modified samples have a gradual increase with up to a 4.2-fold enhancement. It has been demonstrated that ∼9% of Iso-OH modulator incorporation produces ∼40% defects, inducing band gap reduction and longer excited states lifetime. Similar defect percentages have been generated upon near 40% Iso-F modulator incorporation; however, negligible band gap changes and shorter excited states lifetimes were determined. The higher photocatalytic activity in Iso-F modulator derived MOF has been attributed to the effect of the divergent defect-compensation modes on the materials' photostability and to the increase in the external surface area upon introduction of Iso-F modulator.

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