Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition

Abstract In this study, PdSe 2 n‐ and p‐metal‐oxide semiconductor field‐effect transistors (MOSFETs) are realized using the same conventional metal contact without any doping processes through utilizing the thickness‐dependent phase transition in PdSe 2 . PdSe 2 is semiconducting with a sizable band gap in a few layers while semimetallic in bulk. With the thin semiconducting PdSe 2 for the channel and the conventional metal source/drain, an n‐type behavior is achieved, whereas a p‐type behavior with the thin PdSe 2 channel and the thick semimetallic PdSe 2 source/drain. To understand the carrier injection at the interface between the thin PdSe 2 channel and the thick PdSe 2 source/drain, a rigorous analysis of the band alignment and the temperature‐dependent transfer characteristics is presented to extract the Schottky barrier height at the interface. Additionally, interconnecting PdSe 2 n‐ and p‐MOSFETs successfully demonstrate complementary metal‐oxide semiconductor (CMOS) inverter with clear voltage transfer characteristics. The proposed approach to control the polarity of PdSe 2 MOSFETs using the unique thickness‐dependent phase transition in PdSe 2 is promising for realizing the CMOS logic circuit with the same channel material and single contact metal.