THE EFFECT OF ELECTRON-ELECTRON SCATTERING ON HOT PHOTOEXCITED ELECTRONS IN GaAs

The effect of electron-electron scattering on hot photoexcited electrons in GaAs is studied by performing numerical calculations of the electron distribution function. The calculations apply to conditions of continuous monochromatic photoexcitation and take account of the following effects : injection of electrons into the conduction band (the injection energy is taken to be less than the L.O. phonon energy), collisions between electrons of unlike spin, collisions between electrons of like spin, electron-phonon collisions (via the piezoelectric and deformation potential interactions) and recombination. It is shown that various departures from quasi-equilibrium occur if the electron density is sufficiently low (≤1012 cm-3) or sufficiently high (≥1018 cm-3).