Defect Levels of AgGaS2 Single Crystals

The defect levels of as-grown AgGaS2 single crystals with the energy depths of about 20, 50, 100, 170, 230, 390 and 700 meV from the edge of either valence band or conduction band were estimated from the temperature dependence of photoconductivity spectrum. The relations between those levels and the emission peaks in the photoluminescence spectrum were discussed and a possible band diagram was made.