Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

The formation kinetics of μc-Si:H has been investigated through the film depositions and plasma diagnoses in widely-scanned glow discharge plasma conditions; RF power density, SiH4/H2 ratio and substrate temperature. The roles of H and SiHx adsorbed on the surface as well as impinging ions have been discussed in relation to volume fraction and crystallite size of μc films, and continuous control of crystallite size has been demonstrated using a triode system. Hall mobility of the deposited μc-Si:H films has also been presented as a function of the volume fraction of μc.