Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.