Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p–i–n Homojunction Solar Cells

The photovoltaic (PV) properties of the InGaN p–i–n homojunction solar cell are investigated at different temperatures and light intensities. With increasing temperature, the dark current–voltage ( I – V ) behaviors display a large variation especially at the forward voltage near the open-circuit voltage ( V oc ) region, which leads to a great degradation of the V oc at high temperatures. The short-circuit current density ( J sc ) first increases and then decreases as temperature increases. The photocurrent transport mechanisms at different temperatures and light intensities are analyzed by fitting the I – V curves using different carriers transport models. The traps inside the p–i–n junction especially in the p-type region tend to be activated at elevated temperatures above 338 K, which increase the recombination and reduce J sc . The conversion efficiencies of the solar cell are mainly affected by V oc , which degrades rapidly with elevated temperatures.