Study on the Technology Principle of Ion-beam Assisted Low-energy Carbon Ion Implantation

Ion-beam assisted low-energy carbon ion implantation is a new technology of materials surface modification,in which carborn ions were implanted by medium-energy ion beam assisted bombarding while carbon thin films were deposited by low-energy ion beam. Carbon ions can be deeply implanted into the surface layer of the substrate in low temperature and the implantation depth by it is bigger about 1～2 times than the one by the dynamic ion-beam mixing(DIM).The temperature of substrates were controlled at about 130?℃ and the implanted depth increased when ion beam current was changed alternately. The microhardness HV of surface of 40Cr steel increased about one time after ion implantation.