Review—Nanosheet Field Effect Transistors

Abstract Transistor technology plays a crucial role in human life. The aim is to increase the number of applications and enhance speed in a single integrated circuit (IC). Here, we review the nanosheet field-effect transistor and its various effects, including the impact of device dimensions and temperature, the effect of surface orientation, and reliability concerns. We also review the device structure, process flow, fabrication challenges, current issues, and compare NSFETs with FinFETs and nanowire field-effect transistors.