掺杂剂
材料科学
钝化
钙钛矿(结构)
兴奋剂
光电子学
卤化物
磁滞
纳米技术
无机化学
化学工程
图层(电子)
凝聚态物理
化学
物理
工程类
作者
Ji‐Young Go,Gwon Byeon,Taesu Choi,Shaopeng Yang,Wenwu Li,Yong‐Young Noh
标识
DOI:10.1002/adfm.202303759
摘要
Abstract Metal halide perovskite optoelectronic devices have made significant progress over the past few years, but precise control of charge carrier density through doping is essential for optimizing these devices. In this study, the potential of using an organic salt, N , N ‐dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn‐based perovskite devices, is explored. Under optimized conditions, the thin film transistors based on the doped 2D/3D perovskite PEAFASnI 3 demonstrate remarkable improvement in hole mobility, reaching 7.45 cm 2 V −1 s −1 with a low subthreshold swing and the smallest sweep hysteresis (Δ V hysteresis = 2.27 V) and exceptional bias stability with the lowest contact resistance (2.2 kΩ cm). The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and also surface passivation against Sn oxidation due to its hydrophobic nature surface. This improvement is attributed to the bifunctional effect of the dopant, which simultaneously passivates defects and improves crystal orientation. These findings provide new insights into potential molecular dopants that can be used in metal halide perovskite devices.
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