数码产品
等离子体
材料科学
工程物理
纳米技术
工程类
电气工程
物理
核物理学
作者
Xiaolei Feng,Hong Tao,Sijie Yang,C.H. Liu,Changhao Wei,Yuankun Wang,Hongyang Zhao,Shuhua Yao,Zhenxiang Cheng
标识
DOI:10.1002/admt.202402207
摘要
Abstract 2D materials have shown significant promise in the electronics industry, primarily due to their ultrathin structure and complex energy band configurations, positioning them as strong contenders to challenge Moore's Law. Despite their potential, the advancement of 2D materials has been impeded by the absence of effective methods for controlled epitaxial synthesis and performance modification. Plasma technology has emerged as a powerful tool for the synthesis and modification of these materials, garnering substantial interest. This review begins with an overview of plasma technology, exploring the mechanisms through which plasma interacts with 2D materials. It then delves into the synthesis and modification processes of 2D materials using plasma, highlighting key examples such as graphene, transition metal dichalcogenides, and hexagonal boron nitride. The discussion extends to include Janus materials and other variants, such as oxidized, doped, phase‐change engineered, and etched‐thinned materials, along with their applications in electronics. The paper concludes by summarizing the current optimal outcomes of technology in this field and providing an outlook on developments and directions.
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