物理
朗缪尔探针
感应耦合等离子体
消散
等离子体
偏压
原子物理学
射频功率放大器
联轴节(管道)
功率(物理)
温度电子
等离子体振荡
等离子体诊断
电压
光电子学
材料科学
放大器
量子力学
CMOS芯片
冶金
作者
Yi He,M. Lu,Xue Liu,Jiamin Huang,Jiawei Zhang,Xiaoping Ma,Lei Huang,Liang Xu,Yu Xin
摘要
The coupling effects between the bias power and the inductive power in the RF-biased inductively coupled plasma with synchronous control are investigated by measuring electron energy distribution function using a compensated Langmuir probe. With synchronous control, the inductive power and the bias power are driven at an identical phase and frequency. The experimental results show that the inductive power lowers the self-bias voltage, while the bias power changes the plasma density by introducing extra power absorption and dissipation. The bias power also enhances the electron beam confinement, leading to an increase in electron density at a low pressure. Furthermore, in the E and H mode transition, with the bias power increasing, the hysteresis power reduces, and the electron density jump decreases.
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