拉曼光谱
材料科学
热导率
纳米线
激光器
锗
光电子学
硅
热的
激光功率缩放
光谱学
光学
复合材料
物理
量子力学
气象学
作者
Sho Sugawa,Ryo Yokogawa,Atsushi Ogura
标识
DOI:10.35848/1347-4065/ad1bc0
摘要
Abstract Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe) nanowires (NWs). The temperature in SiGe NWs was calculated using the relationship between Raman shift ω and temperature T ( d ω / d T ) to evaluate the correlation between the thermal transport mechanism and SiGe NWs structure. We clarified that the thermal conductivity of the SiGe NWs decreases as the wire width becomes narrower. Also, a positional dependence of the thermal conductivity properties of the SiGe NWs was observed by laser power sweep Raman spectroscopy.
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