Effect of pressure on arsenic diffusion in germanium

We report preliminary results of a study of the activation volume for diffusion of arsenic in germanium. High-temperature high-pressure anneals were performed in a liquid argon pressure medium in a diamond anvil cell capable of reaching 5 GPa and 750 C,l which is externally heated for uniform and repeatable temperature profiles. Broadening of an ion-implanted arsenic profile was measured by Secondary Ion Mass Spectrometry. Hydrostatic pressure retards the diffusivity at 575 C, characterized by an activation volume that is +15% of the atomic volume of Ge. Implications for diffusion mechanisms are discussed.