响应度
材料科学
异质结
光电探测器
石墨烯
光电子学
紫外线
兴奋剂
暗电流
量子点
比探测率
纳米技术
作者
Yanghua Lu,Zhanjun Wu,Weiwei Xu,Shisheng Lin
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2016-11-02
卷期号:27 (48): 48LT03-48LT03
被引量:43
标识
DOI:10.1088/0957-4484/27/48/48lt03
摘要
A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
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