Direct Growth of Ag/Ni(OH)2 Composite on Cu Foam by a Modified Galvanic Displacement Reaction Followed by Electrodeposition

The Ag/Ni(OH) 2 composite has grown directly on Cu foam substrate via a modified galvanic displacement reaction between the mixed solution (AgNO 3 and KBr) and Cu foam, followed by subsequent electrodeposition. Cu foam functions as a reducing agent and electrode substrate. The in situ growth strategy enables the active material to form a strong connection with the substrate, which is beneficial for the fast ionic/electronic transport and lowers the equivalent series resistance. On the other hand, the introduction of Ag improves the electrical conductivity of the material and increases the specific surface area, and even participates in the electrochemical reaction as an effective constituent. Such factors can significantly boost the electrochemical performances of the product, including a high specific capacitance of 1755[Formula: see text]F[Formula: see text]g[Formula: see text] at 2.5[Formula: see text]A[Formula: see text]g[Formula: see text] coupled with long-term cyclic stability at 83.87% (5000 cycles).