非阻塞I/O
分压
材料科学
薄膜
微观结构
基质(水族馆)
无定形固体
氧气
溅射
氧化镍
微晶
分析化学(期刊)
镍
复合材料
冶金
纳米技术
结晶学
化学
催化作用
色谱法
生物化学
海洋学
有机化学
地质学
作者
Saheer Cheemadan,M.C. Santhosh Kumar
标识
DOI:10.1088/2053-1591/aab875
摘要
Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.
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