Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.