材料科学
磨料
抛光
氯
化学机械平面化
兴奋剂
复合材料
化学工程
冶金
光电子学
工程类
作者
Peiwei Zhang,Wei Zhang,Yuan Wu,Xu Wang,Xin Li,Siqingaowa Jin,Dongliang Zhang,Yan Zhao,Wei Zhou,Mitang Wang
标识
DOI:10.1149/2162-8777/add80b
摘要
Abstract To investigate the effect of chlorine doping on the polishing performance of ceria and the underlying mechanism during the ceria polishing process, ceria powders doped with different chlorine contents were prepared using the precipitation method with altered washing conditions. The chlorine content in the ceria was determined by the silver nitrate colorimetric method. Polishing experiments were then conducted, and the concentrations of Ce3+ and oxygen vacancies in the powders before polishing were calculated using X-ray photoelectron spectroscopy fitting. X-ray diffraction was used to analyze the structural changes of the powder before and after polishing. The results revealed that higher calcination temperatures facilitate chlorine doping, and as the chlorine doping level increases, the concentrations of Ce3+ and oxygen vacancies in CeO2 also increase, reaching a maximum of 16.13% and 29.91%, respectively. This promotes the formation of Ce(III)-O-Si bonds, thereby enhancing the material removal rate of ceria. Furthermore, chlorine doping significantly reduces the crystallinity of ceria during the early stages of polishing, resulting in ceria particles with lower hardness, higher plasticity, and greater adhesion. These properties not only extend the polishing lifetime of the powder but also effectively reduce the formation of scratches on the polished glass surface.
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