Manufacturing Chip-Scale 2D Monolayer Single Crystals through Wafer-Bonder-Assisted Transfer

Significant progress has been made in growing large-area transition metal dichalcogenide (TMD) monolayers, but most rely on stitching small flakes, which can affect electronic and optical performance. High-quality single-crystal monolayers are needed for device applications. Here, we report a wafer-bonder-assisted transfer (WBAT) method to produce uniform, crack-free, single-crystal TMD monolayers over large areas. This technique integrates gold-tape exfoliation with wafer-scale bonding, enabling flake sizes over 106 times larger than those from traditional Scotch tape exfoliation. Compared to hand-press transfer, WBAT yields higher-quality monolayers with fewer cracks, reduced strain, and over 2-fold improvement in photoluminescence uniformity, as confirmed by Raman and PL mapping. Fabricated field-effect transistor arrays show high mobility and on–off ratio. The WBAT method offers high yield, reproducibility, and compatibility with various 2D materials, heterostructures, and substrates, aligning with standard semiconductor processes. It provides a scalable solution for integrating high-quality TMD monolayers into next-generation electronic and optoelectronic devices.