铁电性
材料科学
双稳态
二极管
光电子学
电介质
晶体管
场效应晶体管
位移电流
电容
栅极电介质
半导体
负阻抗变换器
凝聚态物理
电压
电气工程
化学
物理
电压源
电极
工程类
物理化学
作者
R.C.G. Naber,Joost Massolt,Mark-Jan Spijkman,Kamal Asadi,Paul W. M. Blom,Dago M. de Leeuw
摘要
The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on metal-insulator-semiconductor diodes demonstrate that the bistability originates from switching between two states in which the ferroelectric gate dielectric is either polarized or depolarized. Pulsed charge displacement measurements on these diodes enable a direct measurement of the accumulated charge in the polarized state of 40±3mC∕m2.
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