Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS

A direct measurement method of impurity concentrations in boron doped silicon by SIMS is reported. Boron concentrations in silicon in the range of 10 14 to 10 19 Bcm -3 are measured in comparison with photoluminescence studies, and the resistivity measurements are made in reference to a nuclear track technique. The background signal of boron ions due to origins other than doped silicon is related to the primary ion current. The detection limit of boron in silicon is as low as 10 14 Bcm -3 and is expected to be lowered further by reducing the boron background.