异质结
光电二极管
光电子学
材料科学
电介质
氧化物
栅极电介质
铪
晶体管
电气工程
电压
冶金
工程类
锆
作者
Yuchun Li,Xiaoxi Li,Guang Zeng,Yu‐Chang Chen,Ding-Bo Chen,Bo-Fang Peng,Li‐Yuan Zhu,David Wei Zhang,Hong-Liang Lü
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2021-01-01
卷期号:13 (34): 14435-14441
被引量:17
摘要
Jones @ 633 nm have been demonstrated. Such high performances are attributed to the band alignment of the type-II heterojunction and the suppression of dark current by the local-back-gate. This work provides a promising reference for two-dimensional (2D) Re-based heterojunction optoelectronic devices.
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