High optoelectronic performance of a local-back-gate ReS2/ReSe2 heterojunction phototransistor with hafnium oxide dielectric

Jones @ 633 nm have been demonstrated. Such high performances are attributed to the band alignment of the type-II heterojunction and the suppression of dark current by the local-back-gate. This work provides a promising reference for two-dimensional (2D) Re-based heterojunction optoelectronic devices.