材料科学
石墨烯
硅
晶界
纳米技术
碳纤维
氧化石墨烯纸
化学气相沉积
化学工程
氢
金属
氧化物
基质(水族馆)
杂质
氧气
冶金
化学
复合材料
复合数
有机化学
微观结构
工程类
地质学
海洋学
作者
Yanhui Zhang,Yanping Sui,Zhiying Chen,He Kang,Jing Li,Shuang Wang,Sunwen Zhao,Guanghui Yu,Songang Peng,Zhi Jin,Xinyu Liu
出处
期刊:Carbon
[Elsevier]
日期:2021-11-15
卷期号:185: 82-95
被引量:7
标识
DOI:10.1016/j.carbon.2021.09.016
摘要
Large-area and high-quality graphene grown on metal by chemical vapor deposition (CVD) has great potential applications in electronics and photo electronics. After more than 10 years of development, great progress has been made in the growth of graphene, and the role of various factors in the growth of graphene has been gradually clear. In this review, the role of hydrogen and oxygen in the formation and elimination of carbon-based impurities and silicon oxide particles and in the formation, observation, and control of grain boundary, point defects, and wrinkles is introduced. The content focuses on the specific experimental methods, results, and mechanism. Finally, the challenges of hydrogen and oxygen in the study of graphene growth on metal are introduced. This review can increase the theoretical knowledge and experimental design ability related to hydrogen and oxygen in CVD graphene grown on metal.
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