聚酰亚胺
材料科学
电容器
基质(水族馆)
薄膜晶体管
光电子学
阈值电压
圆周率
电压
复合材料
电气工程
图层(电子)
化学
晶体管
生物化学
海洋学
地质学
工程类
作者
Hyojung Kim,Jongwoo Park,Taeyoung Khim,Sora Bak,Jang‐Kun Song,Byoungdeog Choi
标识
DOI:10.1038/s41598-021-87950-0
摘要
Abstract In this paper, we investigate the V th shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V th of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V th with a glass substrate rarely changed even with increasing stress. Such a positive V th shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO 2 /PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO 2 /PI interface contributes to the V th shift of the LTPS TFTs leading to image sticking.
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