单层
成核
光致发光
基质(水族馆)
材料科学
钼
半导体
化学工程
大气温度范围
纳米技术
化学
分析化学(期刊)
光电子学
冶金
有机化学
物理
地质学
工程类
气象学
海洋学
作者
Shengzhong Jin,Shuping Zhao,Jiaxin Weng,Yuguang Lv
出处
期刊:Coatings
[Multidisciplinary Digital Publishing Institute]
日期:2017-06-08
卷期号:7 (6): 78-78
被引量:3
标识
DOI:10.3390/coatings7060078
摘要
Molybdenum disulphide (MoS2) monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS2 in high quality. Herein, we report the growth of monolayer of MoS2 on the SiO2/Si substrate with manganese heterogeneous nucleation. It was shown that the Mn promotes the growth of monolayer MoS2 via heterogeneous nucleation. The growth temperature range expanded two-fold, the nucleation density increased as well. The monolayer prepared in the presence of Mn exhibits a unique red emission peak at 732 nm at room temperature compared to the sample in the absence of Mn.
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