材料科学
弹性体
光电子学
图层(电子)
电介质
场效应晶体管
晶体管
电压
纳米技术
复合材料
电气工程
工程类
作者
Xiaoying Zhang,Xiangxiang Li,Weiyu Wang,Hongchen Jiang,Xinran Zheng,Huiqi Yang,Xin Ye,Hui Yang
标识
DOI:10.1002/aelm.202400981
摘要
Abstract Stretchable organic field‐effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as excellent mechanical compatibility, flexibility, and signal amplification capabilities. However, achieving low‐voltage operation remains challenging, which limits their practical application. Herein, a tri‐layer dielectric design is developed to achieve low‐voltage, high‐mobility stretchable organic transistors for gas sensors. The tri‐layer dielectric, consisting of a high‐κ polymer film, a non‐polar polymer layer, and a cross‐linking layer, allows the transistors to operate at −5 V. The stretchable transistor‐based gas sensors exhibit high sensitivity of gas detection capability. Thus, stretchable field‐effect transistors based on tri‐layer dielectrics offer a promising strategy for advancing wearable gas sensors.
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