Dual relaxation behaviors driven by homogeneous and stable dual-interface charge layer based on EGaIn absorber

Interface engineering, by modulating defect distribution and impedance at interfaces and inducing interfacial polarization, has proven to be an effective strategy for optimizing dielectric properties. However, the inherent incompatibility between heterogeneous phases presents a significant challenge in constructing multi-heterointerfaces and understanding how their distribution influences dielectric performance. Herein, we constructed an EGaIn@Ni/NiO/Ga