Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

The present study thoroughly explores the time‐average population transfer rate (TAPTR) of impurity‐doped GaAs quantum dot (QD) pursuing the change in the spatial impurity spread (SIS). The said excitation rate is studied under the influence of Gaussian white noise (GWN). The rise of the ground‐state electronic density takes place due to different types of time‐changing fluctuations, viz. simple sinusoidal field, time‐dependent confinement potential, and time‐dependent magnetic field. GWN couples with the QD by additive and multiplicative modes. In this work, the joint influence of SIS and GWN and its pathway of inclusion and the nature of the time‐dependent perturbations are examined on the attributes of the TAPTR. The TAPTR curves are composed of steadfast rise, steadfast diminish, maximization (relevant to generation of large nonlinear optical properties), minimization, and saturation (suggesting dynamic freezing). The findings elucidate the means of fine‐tuning the TAPTR among the doped GaAs QD eigenstates in presence of noise, when the SIS undergoes a gradual change.