神经形态工程学
材料科学
晶体管
电解质
长时程增强
兴奋性突触后电位
生物相容性材料
突触可塑性
计算机科学
纳米技术
光电子学
人工神经网络
神经科学
化学
生物医学工程
人工智能
电气工程
电极
电压
生物
生物化学
物理化学
工程类
受体
医学
抑制性突触后电位
作者
Haiyang Qiu,Dandan Hao,Hui Li,Yepeng Shi,Dong Yao,Ao Liu,Fukai Shan
摘要
Electrolyte-gated synaptic transistors are promising for artificial neural morphological devices. However, few literatures have been reported regarding the manufacturing of electrolyte-gated synaptic transistors with low cost and biocompatible components. Here, the fully transparent synaptic transistors based on water-induced In2O3 thin films have been integrated by sol–gel method at low temperature, and lactose dissolved in citric acid solution is used as the gate electrolyte. The migration of the ions at the interface plays a crucial role in the potentiation and depression of the synaptic weight. In this work, the biological synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, short-term memory, and long-term memory, are mimicked. Meanwhile, based on the potentiation/depression behaviors of the synaptic transistor, a three-layer artificial neural network is applied for pattern recognition, and the recognition accuracy is as high as 94.6%. This study offers a possibility to realize fully transparent synaptic devices with biocompatible components at low temperature.
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