材料科学
单斜晶系
中子衍射
半导体
变形机理
结晶学
可塑性
打滑(空气动力学)
脆性
硅
位错
变形(气象学)
凝聚态物理
复合材料
晶体结构
冶金
微观结构
化学
热力学
光电子学
物理
作者
Yanxu Wang,Wu Gong,Takuro Kawasaki,Stefanus Harjo,Kun Zhang,Z.D. Zhang,Bing Li
摘要
Bulk Ag2S is a plastic inorganic semiconductor at room temperature. It exhibits a compressive strain greater than 50%, which is highly different from brittle conventional counterparts, such as silicon. Here, we present the experimental investigation of the deformation behavior in a plastic inorganic semiconductor Ag2S using in situ neutron diffraction during compressive deformation at room and elevated temperatures. At room temperature, the lattice strain partitioning among hkl-orientated grain families could be responsible for the significant work-hardening behavior in the bulk Ag2S with a monoclinic structure. The rapid accumulation of lattice defects and remarkable development of the deformation texture suggest that dislocation slip promotes plasticity. At 453 K, a monoclinic phase transforms into a body-centered cubic phase. A stress plateau appears at ∼−4.8 MPa, followed by a rehardening state. The deformation mode of bulk Ag2S at the initial stage is likely attributable to the migration of silver ions, and as strain increases, it is closer to that of room temperature, leading to rehardening.
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