Reducing charge-recombination losses in photovoltaic cells by spontaneous reconstruction of n/p homojunction in a monolithic perovskite film using black phosphorus nanosheets

同质结 材料科学 钙钛矿(结构) 晶界 载流子 纳米片 光电子学 工作职能 能量转换效率 奥斯特瓦尔德成熟 电子迁移率 纳米技术 化学工程 兴奋剂 图层(电子) 复合材料 工程类 微观结构
作者
Lin Fan,Miao Yu,Wanting Hu,Lixue Wang,Zirui Mao,Fengyou Wang,Xiaoyan Liu,Xin Qu,Qiong Wu,Zhaoliang Yu,Lili Yang,Huilian Liu
出处
期刊:Chemical Engineering Journal [Elsevier BV]
卷期号:479: 147861-147861 被引量:6
标识
DOI:10.1016/j.cej.2023.147861
摘要

Trap-assisted charge recombination and interfacial charge recombination have limited further improvements in the efficiency and stability of perovskite solar cells. We construct a novel two-dimensional (2D) black phosphorus nanosheet (BP NS)-modified perovskite model that utilizes an upgraded additive post-processing technique to introduce 2D BP NSs, comprising multiple functional groups and carrying a high charge mobility and high work function, into the absorber during Ostwald ripening. 2D BP NSs, while passivating grain boundaries and surface defects, successfully induced the in-situ formation of an intriguing n/p homojunction structure between the underlying bulk and the top in a monolithic perovskite film, i.e., a graded n/p-PVK-BP absorber. This resulted in the synergistic advantages of expanding the built-in electric field to facilitate the oriented transfer of photogenerated carriers, optimizing the energy level alignment, and minimizing the hole injection barrier at the perovskite/hole transporting layer interface, thereby accelerating the selective extraction/collection of interfacial charges and synchronously reducing nonradiative and interfacial charge recombination losses. The 2D BP NSs anchored at the grain boundaries and surface of p-type perovskite form a “fast path” for hole migration, achieving carrier transport balance at the top and bottom interfaces. The optimized n/p-PVK-BP device achieved an efficiency of 23.22 %, with negligible hysteresis. Owing to the synergistic effects of the various advantages of the graded n/p-PVK-BP homojunction absorber, the unencapsulated device exhibited good long-term storage and operational stability, providing potential for commercial conversion of perovskite-based optoelectronics. This work provides a simple homojunction structure design and performance optimization strategy for the simultaneous reduction of trap-assisted charge recombination and interfacial charge recombination losses and provides new insights for the development of more efficient and stable perovskite photovoltaic applications.
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