材料科学
薄膜晶体管
光电子学
阈值电压
氧化物
栅极电介质
晶体管
图层(电子)
电气工程
电压
纳米技术
冶金
工程类
作者
Jun Jin,Xiaoyu Lin,Jiaye Zhang,Jeongho Lee,Zhenyuan Xiao,Soobin Lee,Jaekyun Kim
标识
DOI:10.1002/aelm.202201117
摘要
Abstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic Al x O y film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic Al x O y exhibits an effective saturation mobility of 12.56 cm 2 Vs −1 , a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec −1 , a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (Δ V TH ) < −0.03 V under a negative gate bias stress and Δ V TH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual‐channel layer and an anodic‐oxide gate dielectric layer, have great potential for low‐power, portable, and wearable electronics.
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