Vacuum-deposited perovskite CsPbBr3 thin-films for temperature-stable Si based pure-green all-inorganic light-emitting diodes

Metal halide perovskite light-emitting diodes (PeLEDs) are excellent candidates in the field of lighting and display due to their outstanding optical-electrical properties. However, the solution-processed technology of perovskite films and the organic electron/hole transport layers of PeLEDs make it still challenging to improve the operational stability of devices. Herein, we successfully prepared highly luminescent CsPbBr3 perovskite films via vacuum-deposited method and then fabricated all-inorganic PeLEDs with the heterostructure of p-NiO/CsPbBr3/n-Si. Our device exhibits pure-green emission with a wavelength of 527 nm, a narrow full width at half-maximum of 18 nm, and a maximum luminance of 51933 cd/m2, representing one of the best brightness pure-green PeLEDs. Most importantly, the PeLEDs exhibited great thermal stability with a heat resistance up to 80 °C. The electroluminescence peak position of the PeLEDs remains consistent when the ambient temperature increases from 40 °C to 110 °C. Moreover, the all-inorganic PeLEDs can maintain their good luminescence performance after seven thermal cycling tests (30 °C–100 °C). This work not only demonstrated a facile strategy to prepare high-quality pure-green CsPbBr3 perovskite films, but also provided an important all-inorganic device structure for high thermal stability of PeLED.