材料科学
算法
分析化学(期刊)
计算机科学
化学
色谱法
作者
Xinxin Li,Zhen Deng,Jun Li,Yangfeng Li,Linbao Guo,Yang Jiang,Zhuangzhuang Ma,Lu Wang,Chunhua Du,Ying Wang,Qingbo Meng,Haiqiang Jia,Wenxin Wang,Wu-Ming Liu,Hong Chen
出处
期刊:Photonics Research
[The Optical Society]
日期:2020-10-09
卷期号:8 (11): 1662-1662
被引量:30
摘要
An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7 × 10 − 7 A / cm 2 at − 1 V and a high rectification ratio of 1.5 × 10 8 at ± 1 V . Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.
科研通智能强力驱动
Strongly Powered by AbleSci AI