氧化铟锡
材料科学
光电子学
铟
锡
吸收(声学)
氧化物
电极
表征(材料科学)
薄膜
可见光谱
霍尔效应
红外线的
纳米技术
光学
复合材料
电气工程
冶金
化学
电阻率和电导率
工程类
物理化学
物理
作者
L. H. Willems van Beveren,E. Yu. Panchenko,N. Anachi,Lachlan Hyde,Douglas J. Smith,Tony D. James,Ann Roberts,Jeffrey C. McCallum
标识
DOI:10.1109/commad.2014.7038675
摘要
We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.
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